? 2003 ixys all rights reserved g = gate c = collector e = emitter tab = collector symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1200 v v cgr t j = 25 c to 150 c; r ge = 1 m? 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c5 0 a i c110 t c = 110 c2 8 a i cm t c = 25 c, 1 ms 150 a ssoa v ge = 15 v, t j = 125 c, r g = 10 ? i cm = 60 a (rbsoa) clamped inductive load @0.8 v ces p c t c = 25 c 250 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque 1.13/10 nm/lb.in. maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s weight 6 g symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = v ces t j = 25 c 28n120b 25 a v ge = 0 v 28n120bd1 50 a i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = 28a, v ge = 15 v 2.9 3.5 v note 2 t=125 c 2.8 features z international standard package z igbt and anti-parallel fred for resonant power supplies - induction heating - rice cookers z mos gate turn-on - drive simplicity z fast recovery expitaxial diode (fred) - soft recovery with low i rm advantages z saves space (two devices in one package) z easy to mount with 1 screw (isolated mounting screw hole) z reduces assembly time and cost ds99135(12/03) high voltage igbt with diode ixgq 28n120b ixgq 28n120bd1 v ces = 1200 v i c25 =50a v ce(sat) = 3.5 v t fi(typ) = 160 ns d1 to-3p (ixgq) g c e (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. g fs i c = 28a; v ce = 10 v, note 2 20 30 s c ies 2700 pf 28n120b 170 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 28n120bd1 180 pf c res 60 pf q g 92 nc q ge i c = 28a, v ge = 15 v, v ce = 0.5 v ces 17 nc q gc 37 nc t d(on) 30 ns t ri 20 ns t d(off) 180 280 ns t f i 160 320 ns e off 2.0 5.0 mj t d(on) 35 ns t ri 28 ns e on 2.5 mj t d(off) 250 ns t f i 300 ns e off 8.0 mj r thjc 0.5 k/w r thck 0.25 k/w reverse diode (fred) characteristic values (t j = 25c, unless otherwise specified) symbol test conditions min. typ. max. i f t c = 90 c1 0 a v f i f = 10 a, v ge = 0 v 2.95 v i f = 10 a, v ge = 0 v, t j = 125 c 2.0 v i rm i f = 10 a; -di f /dt = 400 a/ s, v r = 600 v 14 a t rr v ge = 0 v; t j = 125 c 120 ns t rr i f = 1 a; -di f /dt = 100 a/ s; v r = 30 v, v ge = 0 v 40 n s r thjc 2.5 k/w inductive load, t j = 125 c i c = 28a; v ge = 15 v v ce = 0.8 v ces ; r g = r off = 5 ? note 1 inductive load, t j = 25 c i c = 28 a; v ge = 15 v v ce = 0.8 v ces ; r g = r off = 5 ? note 1. notes: 1. switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g . 2. pulse test, t 300 s, duty cycle d 2 % ixgq 28n120b ixgq 28n120bd1 to-3p (ixtq) outline
? 2003 ixys all rights reserved IXGQ28N120B ixgq 28n120bd1 fig. 2. extended output characteristics @ 25 deg. c 0 30 60 90 120 150 180 210 240 270 02468101214161820 v c e - volts i c - amperes v ge = 17v 7v 9v 11v 13v 15v fig. 3. output characteristics @ 125 deg. c 0 7 14 21 28 35 42 49 56 0.5 1 1.5 2 2.5 3 3.5 4 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 1. output characteristics @ 25 deg. c 0 7 14 21 28 35 42 49 56 0.5 1 1.5 2 2.5 3 3.5 4 v c e - volts i c - amperes v ge = 15v 13v 11v 5v 7v 9v fig. 4. dependence of v ce(sat) on temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 25 50 75 100 125 150 t j - degrees centigrade v c e (s at) - normalize d i c = 28a i c = 14a v ge = 15v i c = 56a fig. 5. collector-to-em itter voltage vs. gate-to-emitter voltage 2 3 4 5 6 7 6 7 8 9 10 11 12 13 14 15 16 17 v g e - volts v c e - volts t j = 25oc i c = 56a 28a 14a fig. 6. input adm ittance 0 10 20 30 40 50 60 70 80 90 100 45678910 v g e - volts i c - amperes t j = 125oc 25oc -40oc
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 IXGQ28N120B ixgq 28n120bd1 fig. 7. transconductance 0 5 10 15 20 25 30 35 0 102030405060708090100 i c - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 8. dependence of turn-off energy loss on r g 2 4 6 8 10 12 14 16 18 20 22 0 102030405060708090100 r g - ohms e off - millijoules i c = 14a t j = 125oc v ge = 15v v ce = 960v i c = 28a i c = 56a fig. 9. dependence of turn-off energy loss on i c 0 2 4 6 8 10 12 14 16 18 20 10 15 20 25 30 35 40 45 50 55 60 i c - amperes e off - millijoules r g = 5 ? r g = 47 ? - - - - v ge = 15v v ce = 960v t j = 125oc t j = 25oc fig. 10. dependence of turn-off energy loss on temperature 0 2 4 6 8 10 12 14 16 18 20 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules i c = 56a r g = 5 ? r g = 47 ? - - - - v ge = 15v v ce = 960v i c = 28a i c = 14a fig. 11. dependence of turn-off sw itching tim e on r g 200 400 600 800 1000 1200 1400 0 102030405060708090100 r g - ohms switching time - nanoseconds i c = 14a t d(off) t fi - - - - - - t j = 125oc v ge = 15v v ce = 960v i c = 28a i c = 56a fig. 12. dependence of turn-off sw itching tim e on i c 0 100 200 300 400 500 600 700 10 15 20 25 30 35 40 45 50 55 60 i c - amperes switching time - nanoseconds t d(off) t fi - - - - - - r g = 5 ? v ge = 15v v ce = 960v t j = 125oc t j = 25oc
? 2003 ixys all rights reserved ixgq 28n120b IXGQ28N120Bd1 fig. 16. maxim um transient therm al resistance 0.10 1.00 1 10 100 1000 pulse width - milliseconds r (th) j c - (oc/w) 0.50 fig. 14. gate charge 0 3 6 9 12 15 0 102030405060708090100 q g - nanocoulombs v g e - volts v ce = 600v i c = 28a i g = 10ma fig. 15. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - p f c ies c oes c res f = 1 mhz fig. 13. dependence of turn-off sw itching tim e on tem perature 50 100 150 200 250 300 350 400 450 500 550 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade switching time - nanoseconds i c = 14a t d(off) t fi - - - - - - r g = 5 ? v ge = 15v v ce = 960v i c = 28a i c = 14a i c = 56a
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 ixgq 28n120b IXGQ28N120Bd1 200 600 1000 0 400 800 90 100 110 120 130 140 150 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 40 80 120 0.0 0.4 0.8 1.2 v fr di f /dt v 200 600 1000 0 400 800 0 10 20 30 40 100 1000 0 500 1000 1500 2000 01234 0 5 10 15 20 25 30 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr z thjc a/ s s dsep 8-12a i f = 20a i f = 10a i f = 5a t vj = 100c v r = 600v t vj = 100c i f = 10a fig. 19 peak reverse current i rm versus -di f /dt fig. 18 reverse recovery charge q r versus -di f /dt fig. 17 forward current i f versus v f t vj = 100c v r = 600v t vj = 100c v r = 600v i f = 20a i f = 10a i f = 5a q r i rm fig. 20 dynamic parameters q r , i rm versus t vj fig. 21 recovery time t rr versus -di f /dt fig. 22 peak forward voltage v fr and t fr versus di f /dt i f = 20a i f = 10a i f = 5a t fr v fr fig. 23 transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 1.449 0.0052 2 0.558 0.0003 3 0.493 0.017 t vj = 25c t vj =100c t vj =150c
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